This decrease in the defect pl intensity is probably caused by the increase of the nonradiative tunneling transition with multiphonon emission because of the increase in the density of si dbs 缺陷pl强度的减小可能是因为随着sidbs密度的增加，与多声子有关的，从导带到悬挂键的非辐射通道迁移的增加而引起的。
